feb-04-2003 1 ba592/ba892... silicon rf switching diode for band switching in tv/vtr tuners and mobile applications very low forward resistance (typ. 0.45 @ 3 ma) small capacitance ba592 ba892/-02l ba892-02v type package configuration l s (nh) marking ba592 ba892 BA892-02L ba892-02v sod323 scd80 tslp-2-1 sc79 single single single, leadless single 1.8 0.6 0.4 0.6 blue s aa aa a maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 35 v forward current i f 100 ma junction temperature t j 150 c operating temperature range t op -55 ... 125 storage temperature t st g -55 ... 150 thermal resistance parameter symbol value unit junction - soldering point 1) ba592 ba892, ba892-02v BA892-02L r thjs 135 120 70 k/w 1 for calculation of r thja please refer to application note thermal resistance
feb-04-2003 2 ba592/ba892... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 20 v i r - - 20 na forward voltage i f = 100 ma v f - - 1 v ac characteristics diode capacitance v r = 1 v, f = 1 mhz v r = 3 v, f = 1 mhz v r = 0 v, f = 100 mhz c t 0.65 0.6 - 0.92 0.85 1 1.4 1.1 - pf reverse parallel resistance v r = 0 v, f = 100 mhz r p - 100 - k forward resistance i f = 3 ma, f = 100 mhz i f = 10 ma, f = 100 mhz r f - - 0.45 0.36 0.7 0.5 charge carrier life time i f = 10 ma, i r = 6 ma, measured at i r = 3ma, r l = 100 rr - 120 - ns i-region width w i - 3 - m insertion loss 1) i f = 0.1 ma, f = 1 ghz i f = 3 ma, f = 1 ghz i f = 10 ma, f = 1 ghz | s 21 | 2 - - - -0.1 -0.05 -0.04 - - - db isolation 1) v r = 0 v, f = 100 mhz v r = 0 v, f = 470 mhz v r = 0 v, f = 1 ghz | s 21 | 2 - - - -23.5 -10.5 -5.5 - - - 1 BA892-02L in series configuration, z = 50
feb-04-2003 3 ba592/ba892... diode capacitance c t = (v r ) f = parameter 0 5 10 15 20 v 30 v r 0 0.4 0.8 1.2 pf 2 c t 1 mhz ... 1 ghz reverse parallel resistance r p = ( v r ) f = parameter 0 5 10 15 20 v 30 v r -1 10 0 10 1 10 2 10 3 10 kohm r p 100 mhz 1 ghz forward resistance r f = ( i f ) f = 100mhz 10 -2 10 -1 10 0 10 1 10 2 ma i f -1 10 0 10 1 10 2 10 ohm r f forward current i f = ( v f ) t a = parameter 0 0.2 0.4 0.6 0.8 v 1.2 v f -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 a i f -40 c 25 c 85 c 125 c
feb-04-2003 4 ba592/ba892... insertion loss | s 21 | 2 = ( f ) i f = parameter BA892-02L in series configuration, z = 50 0 0.5 1 1.5 2 ghz 3 f -0.4 -0.3 -0.2 db 0 | s 21 | 2 10 ma 3 ma 1 ma 0.1 ma isolation | s 21 | 2 = (f) v r = paramter BA892-02L in series configuration, z = 50 0 0.5 1 1.5 2 ghz 3 f -30 -25 -20 -15 -10 db 0 | s 21 | 2 0 v 1 v 10 v
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